Title :
Design study of AlGaAs/GaAs HBTs
Author :
Gao, Guang-bo ; Roulston, David J. ; Morkoç, Hadis
Author_Institution :
Dept. of Electr. Eng., Waterloo Univ., Ont., Canada
fDate :
5/1/1990 12:00:00 AM
Abstract :
The frequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) having different layouts, doping profiles, and layer thicknesses was assessed using the BIPOLE computer program. The optimized design of HBTs was studied, and the high current performances of HBTs and polysilicon emitter transistors were compared. It is shown that no current crowding effect occurs at current densities less than 1×105 A/cm2 for the HBT with emitter stripe width SE<3 μm, and the HBT current-handling capability determined by the peak current-gain cutoff frequency is more than twice as large as that of the polysilicon emitter transistor. An optimized maximum oscillation frequency formula has been obtained for a typical process n-p-n AlGaAs/GaAs HBT having base doping of 1×10 19 cm-3
Keywords :
III-V semiconductors; aluminium compounds; electronic engineering computing; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; AlGaAs-GaAs; BIPOLE computer program; HBTs; current crowding effect; current-handling capability; design optimization; frequency performance; heterojunction bipolar transistors; high current performances; maximum oscillation frequency; peak current-gain cutoff frequency; Doping profiles; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High performance computing; Laboratories; Microwave transistors; Numerical simulation; Photonic band gap; Proximity effect;
Journal_Title :
Electron Devices, IEEE Transactions on
