Title :
Characteristics of p-i junction amorphous silicon stripe-type photodiode array and its application to contact image sensor
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
5/1/1990 12:00:00 AM
Abstract :
Various sandwich structures of photodiode arrays using hydrogenated amorphous silicon films fabricated under similar process conditions were compared. As a result of this comparison, the p-i junction amorphous silicon stripe-type photodiode array was studied. This photodiode array has the same excellent sensor performance characteristics for contact image sensors as the p-i-n junction type, and it has a similar process. A contact image sensor using this photodiode array with eight elements/mm resolution and A4 size is discussed. This compact, high performance sensors was applied to GIII facsimiles
Keywords :
amorphous semiconductors; elemental semiconductors; facsimile equipment; hydrogen; image sensors; photodiodes; silicon; A4 size; GIII facsimiles; amorphous Si:H; contact image sensor; p-i junction amorphous silicon stripe-type photodiode array; sandwich structures; sensor performance characteristics; Amorphous silicon; Chromium; Glass; Image sensors; Indium tin oxide; Optical films; Optical sensors; PIN photodiodes; Photoconductivity; Sensor arrays;
Journal_Title :
Electron Devices, IEEE Transactions on
