A physics-based MOSFET noise model for circuit simulators

Author

Hung, Kwok K. ; Ko, Ping K. ; Hu, Chenming ; Cheng, Yiu C.

Author_Institution

Dept. of Electr. Eng., California Univ., Berkeley, CA, USA

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1323

Lastpage

1333

Abstract

Discussed is a physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions but which is simple enough to be implemented in any general-purpose circuit simulator. Expressions for the flicker noise power are derived on the basis of a theory that incorporates both the oxide-trap-induced carrier number and correlated surface mobility fluctuation mechanisms. The model is applicable to long-channel, as well as submicron n- and p-channel MOSFETs fabricated by different technologies, and all the model parameters can be easily extracted from routine I-V and noise measurements

Keywords

electron device noise; insulated gate field effect transistors; random noise; semiconductor device models; MOSFET; circuit simulators; correlated surface mobility fluctuation mechanisms; flicker noise power; linear region; long channel devices; noise characteristics; oxide-trap-induced carrier number; physics based noise model; saturation region; submicron devices; subthreshold operating regions; 1f noise; Circuit noise; Circuit simulation; Electron traps; Fluctuations; Integrated circuit noise; MOSFET circuits; Noise generators; Noise measurement; Predictive models;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108195

Filename

108195