DocumentCode :
1155871
Title :
Projecting interconnect electromigration lifetime for arbitrary current waveforms
Author :
Liew, Boon-Khim ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
Volume :
37
Issue :
5
fYear :
1990
fDate :
5/1/1990 12:00:00 AM
Firstpage :
1343
Lastpage :
1351
Abstract :
A vacancy-relaxation model is proposed. It predicts the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC-bias lifetime for all waveforms and all frequencies above 1 kHz. The predictions are verified by experiments and significantly raise the projected lifetimes beyond the widely assumed Adc T/Jrmsm. The pure AC lifetimes of aluminum interconnect are experimentally found to be more than 103 times larger than DC lifetime for the same current density. In addition, AC stress lifetimes are observed to follow the same dependences on current magnitude and temperature, for T<300°C, as the DC stress lifetime
Keywords :
aluminium alloys; electromigration; failure analysis; metallisation; silicon alloys; 1 to 104 kHz; 22 to 300 degC; AC lifetime; AC stress lifetimes; AC-plus-DC-bias lifetime; Al; AlSi; DC lifetime; current density; current waveforms; failure site; interconnect electromigration lifetime; vacancy-relaxation model; Conductors; Current density; Electromigration; Frequency; Helium; Integrated circuit interconnections; Predictive models; Pulse circuits; Stress; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.108197
Filename :
108197
Link To Document :
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