The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures

Author

Tack, Marnix R. ; Gao, Minghui ; Claeys, Cor L. ; Declerck, Gilbert J.

Author_Institution

IMEC vzw, Leuven, Belgium

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1373

Lastpage

1382

Abstract

A phenomenon called the MCCM (multistable charge-controlled memory) effect is observed in SOI MOS transistors working at lot temperatures. This MCCM effect essentially results in a controllable setting of the transistor threshold voltage by applying adequate voltage pulses (or up-down voltage sweeps) to one or more electrodes of the structure. A change in threshold voltage of several volts can be obtained. Stability on the order of hours and longer, depending on temperature and operational conditions, is observed. The physics behind the MCCM effect is discussed, and a simple analytical model is proposed. Some new applications based on the MCCM effect are briefly highlighted

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor storage; semiconductor-insulator boundaries; 77 K; SOI MOS transistors; analytical model; low temperatures; multistable charge-controlled memory effect; stability; threshold voltage; up-down voltage sweeps; voltage pulses; Analytical models; CMOS technology; Electrodes; MOSFETs; Physics; Semiconductor films; Stability; Temperature; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108200

Filename

108200