Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate

Author

Okamoto, Yasuhiro ; Ando, Yuji ; Hataya, Koji ; Nakayama, Tatsuo ; Miyamoto, Hironobu ; Inoue, Takashi ; Senda, Masanobu ; Hirata, Koji ; Kosaki, Masayoshi ; Shibata, Naoki ; Kuzuhara, Masaaki

Author_Institution

Center, NEC Corp., Shiga, Japan

Volume

52

Issue

11

fYear

2004

Firstpage

2536

Lastpage

2540

Abstract

A recessed-gate AlGaN-GaN field-modulating plate (FP) field-effect transistor (FET) was successfully fabricated on an SiC substrate. By employing a recessed-gate structure on an FP FET, the transconductance was increased from 150 to 270 mS/mm, leading to an improvement in gain characteristics, and current collapse was minimized. At 2 GHz, a 48-mm-wide recessed FP FET exhibited a record output power of 230 W (4.8 W/mm) with 67% power-added efficiency and 9.5-dB linear gain with a drain bias of 53 V.

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; power field effect transistors; wide band gap semiconductors; 2 GHz; 230 W; 48 mm; 53 V; AlGaN-GaN; AlGaN-GaN heterojunction FET; SiC; SiC substrate; field modulating plate; gain characteristics; improved power performance; recessed gate field effect transistor; recessed gate structure; transconductance; Electron devices; Etching; Hafnium; Heterojunctions; Laboratories; Microwave FETs; Plasma measurements; Research and development; Silicon compounds; Transconductance; 65; FET; FP; Field-effect transistor; GaN; field-modulating plate; recess;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.837159

Filename

1353537