Title :
Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
Author :
Lin, Hui-Feng ; Wu, Chun-Te ; Chien, Wei-Cheng ; Chen, Sheng-Wen ; Kao, Hui-Ling ; Chyi, Jen-Inn ; Chen, Jyh-Shin
Author_Institution :
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan
fDate :
5/1/2005 12:00:00 AM
Abstract :
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300/spl deg/C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; optoelectronic devices; piezoelectric semiconductors; piezoelectricity; semiconductor epitaxial layers; sputtered coatings; surface acoustic wave filters; wide band gap semiconductors; 300 degC; AlN; AlN-GaN-Al/sub 2/O/sub 3/; GaN-Al/sub 2/O/sub 3/; composite structure; epitaxial films; helicon sputtering; high-frequency components; layered structure devices; low temperature grown thin film; optoelectronic properties; piezoelectric properties; semiconducting properties; surface acoustic wave devices; surface acoustic wave filters; Gallium nitride; Piezoelectric devices; Piezoelectric films; Piezoelectric materials; Sputtering; Substrates; Surface acoustic wave devices; Surface acoustic waves; Temperature; Thin film devices;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2005.1503979
