DocumentCode
1156693
Title
Ultra-high speed modulation-doped field-effect transistors: a tutorial review
Author
Nguyen, Loi D. ; Larson, Lawrence E. ; Mishra, Umesh K.
Author_Institution
Hughes Res. Lab., Malibu, CA, USA
Volume
80
Issue
4
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
494
Lastpage
518
Abstract
A tutorial review on the modulation-doped field-effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented. It is believed that with further advances in material growth and device scaling significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future
Keywords
electron device noise; high electron mobility transistors; logic circuits; microwave amplifiers; power transistors; solid-state microwave devices; MODFET; cutoff frequencies; device scaling; material growth; modulation-doped field-effect transistors; noise; switching speed; traveling-wave amplifiers; ultra-high-speed digital logic circuits; Cutoff frequency; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Impurities; MODFET circuits; Tutorial;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.135374
Filename
135374
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