Title :
Ultra-high speed modulation-doped field-effect transistors: a tutorial review
Author :
Nguyen, Loi D. ; Larson, Lawrence E. ; Mishra, Umesh K.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
A tutorial review on the modulation-doped field-effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented. It is believed that with further advances in material growth and device scaling significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future
Keywords :
electron device noise; high electron mobility transistors; logic circuits; microwave amplifiers; power transistors; solid-state microwave devices; MODFET; cutoff frequencies; device scaling; material growth; modulation-doped field-effect transistors; noise; switching speed; traveling-wave amplifiers; ultra-high-speed digital logic circuits; Cutoff frequency; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Impurities; MODFET circuits; Tutorial;
Journal_Title :
Proceedings of the IEEE
