DocumentCode
1156925
Title
Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs
Author
Hutson, J.M. ; Pellish, J.A. ; Tipton, A.D. ; Boselli, G. ; Xapsos, M.A. ; Kim, H. ; Friendlich, M. ; Campola, M. ; Seidleck, S. ; LaBel, K. ; Marshall, A. ; Deng, X. ; Baumann, R. ; Reed, R.A. ; Schrimpf, R.D. ; Weller, R.A. ; Massengill, L.W.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Volume
56
Issue
1
fYear
2009
Firstpage
208
Lastpage
213
Abstract
Single event latchup (SEL) in a 65 nm CMOS SRAM technology due to heavy ions is observed and device sensitivity is shown to be a strong function of lateral beam orientation, angle of incidence, and temperature. Experimental results show the importance of testing at multiple lateral beam orientations to properly characterize device sensitivity.
Keywords
CMOS memory circuits; SRAM chips; ion beam effects; CMOS SRAM technology; SEL; lateral angle effect; multiple lateral beam orientations; radiation effects; single-event latchup; size 65 nm; Anodes; Azimuthal angle; CMOS technology; Cathodes; Electrostatic discharge; Radiation effects; Random access memory; Substrates; Temperature sensors; Testing; 65 nm; azimuthal angle; grazing angle; lateral angle; radiation effects; single event latchup;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2010395
Filename
4782146
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