Title :
Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing
Author :
Sadwick, Larry P. ; Streit, Dwight C. ; Jones, William L. ; Kim, C.W. ; Hwu, R. Jennifer
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Lake City, UT, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
The device-related effects of rapid thermal annealing (RTA) on the electrical and optical properties of planar-doped AlGaAs/InGaAs/GaAs high-electron-mobility transistor structures grown by molecular beam epitaxy were investigated. Specifically, electrical and optical characterization techniques such as capacitance versus voltage, current versus voltage, Hall effect, and photoluminescence have been applied to study the effects that typical III-V compound semiconductor rapid thermal processes (RTPs) have on the properties of pseudomorphic AlGaAs/InGaAs/GaAs structures for two different values of In mole fraction content. The effect and stability of the indium mole fraction on both heterostructure and device integrity with respect to RTA schedule has been investigated in detail
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; incoherent light annealing; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor device testing; AlGaAs-InGaAs-GaAs; C-V characteristics; Hall effect; I-V characteristics; In mole fraction content; device integrity; electrical properties; optical properties; photoluminescence; pseudomorphic HEMT structures; rapid thermal annealing; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Material properties; Molecular beam epitaxial growth; Optical devices; PHEMTs; Rapid thermal annealing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
