Title :
High-speed digital family using field effect diode
Author :
Sheikhian, I. ; Raissi, E.
Author_Institution :
Electr. Eng. Dept., K.N. Toosi Univ. of Technol., Tehran, Iran
fDate :
2/20/2003 12:00:00 AM
Abstract :
Novel high-speed digital subcircuits are proposed using field effect diodes (FED) as active elements. A SPICE simulation of the FED is presented and the characteristics of an inverter are examined. Using FED as the basis for a new digital family is discussed. Simulations show that such circuits are one to two orders of magnitude faster than conventional circuits.
Keywords :
field effect devices; field effect digital integrated circuits; high-speed integrated circuits; logic gates; semiconductor device models; semiconductor diodes; FED inverter; FED-NAND structure; SPICE simulation; field effect diodes; high-speed digital subcircuits; inverter circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030251
