Title :
Rapid isothermal processing of strained GeSi layers
Author :
Nayak, Deepak K. ; Kamjoo, Kamyar ; Park, Jin Suk ; Woo, Jason C S ; Wang, Kang L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
A cold-wall rapid thermal processor was used to study the oxidation and annealing properties of GexSi1-x strained layers. The dry oxidation rate of GexSi1-x was found to be the same as that of Si, while the wet oxidation rate was found to be higher than that of Si, and the oxidation rate increases with the Ge concentration (up to 20% in this study). A high fixed oxide charge density (>5×1011 /cm2) and interface trap level density (>1012 /cm2-eV) at the oxide interface have been determined from capacitance-voltage measurements. Using techniques such as X-ray rocking curve analysis and I-V and C-V measurements of the p-n heterojunction it was found that the degradation of electronic properties of metastable GexSi1-x strained layers during rapid thermal annealing are related to the formation of structural defects at the heterointerfaces
Keywords :
Ge-Si alloys; X-ray diffraction examination of materials; incoherent light annealing; interface electron states; oxidation; semiconductor epitaxial layers; semiconductor materials; GexSi1-x; GexSi1-x-SiO2; I-V characteristics; MBE; X-ray rocking curve analysis; annealing properties; capacitance-voltage measurements; cold-wall rapid thermal processor; dry oxidation rate; fixed oxide charge density; interface trap level density; p-n heterojunction; rapid isothermal processing; rapid thermal annealing; structural defects; wet oxidation rate; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Germanium silicon alloys; Isothermal processes; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
