DocumentCode
1157452
Title
High power and high spectral brightness in 1060 nm α-DFB lasers with long resonators
Author
Paschke, K. ; Güther, R. ; Fricke, J. ; Bugge, E. ; Erbert, G. ; Tränkle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Forschungsverbund Berlin eV, Germany
Volume
39
Issue
4
fYear
2003
fDate
2/20/2003 12:00:00 AM
Firstpage
369
Lastpage
370
Abstract
Angled-grating DFB lasers with long resonators were fabricated and characterised at 1060 nm. 4 mm-long laser diodes showed a CW-output power of 3 W with a times-diffraction-limit factor M2 = 3.2 and a spectral line width of 6 pm. A high spectral brightness of better than 1.2 × 104 MW/(cm2 sr nm) results.
Keywords
III-V semiconductors; brightness; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; α-DFB lasers; 1060 nm; 3 W; 4 mm; CW light-current characteristics; CW output power; GaAs waveguide; InGaAs quantum well; InGaAs-GaAs; InGaAs/GaAs angled-grating DFB lasers; high power; high spectral brightness; long resonators; longitudinal monomode spectrum; spectral line width; times-diffraction-limit factor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030225
Filename
1184072
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