Title :
InGaN/GaN multi-quantum well distributed Bragg reflector laser diode with second-order gratings
Author :
Dumitru, V. ; Schweizer, H. ; Grabeldinger, H. ; Harle, R. ; Bader, Samira ; Weimar, A. ; Lell, A. ; Harle, V.
Author_Institution :
4 Phys. Inst., Stuttgart Univ., Germany
fDate :
2/20/2003 12:00:00 AM
Abstract :
Device fabrication and measurement results of an electrically injected distributed Bragg reflector InGaN/GaN laser operated at room temperature are presented. Using second-order gratings, the emission at 407.6 nm was achieved in the vertical direction, the device acting like a surface emitting laser. A voltage drop at threshold of 11.2 V and temperature stable emission with a wavelength shift of 0.0119 nm/K was obtained for the device.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; 11.2 V; 407.6 nm; InGaN-GaN; InGaN/GaN; electrically injected laser; multi-quantum well distributed Bragg reflector laser diode; second-order gratings; surface emitting laser; temperature stable emission; threshold; vertical direction; voltage drop; wavelength shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030254
