Title :
5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar
Author :
Bakalski, W. ; Matz, R. ; Simburger, Werner ; Weger, P. ; Scholtz, Arpad L.
Author_Institution :
Inst. of Commun. & Radio-Frequency Eng., Vienna Univ. of Technol., Austria
fDate :
2/20/2003 12:00:00 AM
Abstract :
A fully integrated 5.5 × 8.1 mm2 low temperature cofired ceramic (LTCC) power amplifier module for 5-6.5 GHz has been realised in a 40 GHz-fT-BiCMOS technology. No external components are required. At 1 to 2.4 V supply voltages output powers of 17.5 to 24.8 dBm are achieved at 5.9 GHz. The respective power added efficiency is 28 to 36%. The small-signal gain is 23 dB.
Keywords :
BiCMOS analogue integrated circuits; integrated circuit measurement; microwave power amplifiers; 0.3 W; 1 to 2.4 V; 23 dB; 28 to 36 percent; 5 to 6.5 GHz; 60 GHz; BiCMOS technology; LTCC power amplifier module; fully integrated low temperature cofired ceramic power amplifier module; monolithic integrated two-stage push-pull type radio frequency power amplifier; output powers; power efficiency; small-signal gain; supply voltages;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030249
