Title :
Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs
Author :
Kong, F.C.J. ; Yeow, Y.T. ; Domyo, H.
Author_Institution :
Sch. of Inf. Technol. & Electr. Eng., Queensland Univ., St. Lucia, Qld., Australia
fDate :
2/20/2003 12:00:00 AM
Abstract :
The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.
Keywords :
MOSFET; capacitance; impact ionisation; semiconductor device measurement; silicon-on-insulator; surface potential; DC bias; SOS MOSFETs; Si-Al2O3; back surface inversion; back surface potential; body potential variation; capacitance variations; electron-hole pair generation; impact ionisation; inter-electrode capacitance; simulation results; small-signal capacitance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030226
