Title :
Enhancement-mode p-HEMT using selective hydrogen treatment
Author :
Kang, I.H. ; Song, J.I.
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea
fDate :
2/20/2003 12:00:00 AM
Abstract :
A simple novel enhancement-mode p-HEMT has been fabricated using a selective hydrogen treatment. The DC and RF characteristics of the enhancement-mode p-HEMT, with a threshold voltage of ∼0.26 V and IDSS ≅ 0.9 mA/mm, show a selective hydrogen treatment is an effective method to implement an enhancement operation of any HEMT structure without degradation of DC and RF performance except the linearity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hydrogenation; indium compounds; microwave field effect transistors; rapid thermal annealing; sputter etching; 0.26 V; Al0.24Ga0.76As-In0.2Ga0.8As; AlGaAs/InGaAs enhancement-mode p-HEMT; DC characteristics; H2; RF characteristics; RIE; RTA; enhancement operation; hydrogen plasma RF power; linearity; selective hydrogen treatment; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030263
