Title :
A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz
Author :
Smith, P.M. ; Lester, L.F. ; Chao, P.-C. ; Ho, Paul ; Smith, R.P. ; Ballingall, J.M. ; Kao, M.-Y.
Author_Institution :
GE Co., Syracuse, NY, USA
Abstract :
The 94-GHz power performance of a 0.25*75- mu m doped-channel pseudomorphic heterostructure FET (HFET) is reported. A maximum output power of 32 mW, corresponding to a power density of 0.43 W/mm, was obtained with 15% power-added efficiency and 3.0 dB gain.<>
Keywords :
field effect transistors; power transistors; solid-state microwave devices; 0.25 micron; 3.0 dB; 32 mW; 94 GHz; heterostructure FET; maximum output power; power density; power performance; power-added efficiency; pseudomorphic HFET; FETs; Gain; HEMTs; MODFETs; Power generation;
Journal_Title :
Electron Device Letters, IEEE
