• DocumentCode
    1157875
  • Title

    Modeling and experimental validation of sharpening mechanism based on thermal oxidation for fabrication of ultra-sharp silicon nanotips

  • Author

    Agache, Vincent ; Ringot, Roger ; Bigotte, Patrice ; Senez, Vincent ; Legrand, Bernard ; Buchaillot, Lionel ; Collard, Dominique

  • Author_Institution
    Lab. of Integrated Micro-Mechatronic Syst., Univ. of Tokyo, Japan
  • Volume
    4
  • Issue
    5
  • fYear
    2005
  • Firstpage
    548
  • Lastpage
    556
  • Abstract
    This paper aims at modeling the thermal oxidation of silicon pillars leading to the formation of very sharp silicon tips. The model is used to determine optimum process parameters with respect to the initial shape of the silicon pillars and the geometry of the desired tip. The modeling concept is to extend a previous approach, which predicts the oxidation mechanism of silicon cylinders versus their initial radius. The silicon pillar geometry is approximated by a superposition of silicon cylindrical structures featuring a local curvature radius. Experimental validation has been performed for several initial silicon pillar shapes, at 1000°C and 1100°C under dry oxidation conditions, leading to formation of very sharp silicon tips. The numerical predictions are shown to agree well with these experimental data. The motivation of this study aims at designing and fabricating a nanoelectromechanical filter device. Its vibrating part consists of a silicon nanotip, covered with a thin gold layer, the geometrical features of which affect the center frequency of the nanofilter device.
  • Keywords
    micromechanical devices; nanotechnology; oxidation; silicon; 1000 C; 1100 C; Si; dry oxidation; nanoelectromechanical filter device design; nanoelectromechanical filter device fabrication; optimum process parameters; sharpening mechanism; silicon cylinders; silicon nanotip geometry; silicon pillars; stress effects; thermal oxidation; Fabrication; Filters; Geometry; Gold; Nanoscale devices; Oxidation; Predictive models; Shape; Silicon; Solid modeling; Dry oxidation; sharpening effect; silicon tips; stress effects; thermal oxidation;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2005.851386
  • Filename
    1504712