Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Author

Moore, S.A. ; O´Faolain, L. ; Cataluna, M.A. ; Flynn, M.B. ; Kotlyar, M.V. ; Krauss, T.F.

Author_Institution

Sch. of Phys. & Astron., Univ. of St. Andrews

Volume

18

Issue

17

fYear

2006

Firstpage

1861

Lastpage

1863

Abstract

We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10⁴ cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times10⁵ cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices

Keywords

diffusion; quantum dot lasers; surface recombination; carrier confinement; diffusion length; quantum-dot laser; surface recombination rate; surface sidewall recombination; Carrier confinement; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Radiative recombination; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Threshold current; Diffusion length; low threshold; quantum-dot lasers; surface recombination;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.881206

Filename

1677638