DocumentCode :
1157985
Title :
Leakage loss and phase variation of a buried directional coupler on a silicon substrate
Author :
Yamauchi, J. ; Ose, K. ; Shibayama, J. ; Nakano, H.
Author_Institution :
Fac. of Eng., Hosei Univ., Koganei
Volume :
18
Issue :
17
fYear :
2006
Firstpage :
1873
Lastpage :
1875
Abstract :
Effects of the presence of a silicon substrate on the leakage loss and phase variation of silica-based parallel waveguides are investigated using the imaginary-distance beam-propagation method. The leakage loss is evaluated as a function of the distance between the core and the substrate. Calculation shows that the loss of the directional coupler can be estimated using the single waveguide with the same cross section. It is also found that the beat length becomes longer than that without the substrate except the case where the core is extremely close to the substrate. In terms of the loss reduction, the insertion of a SiO2 film with a 1-mum thickness corresponds to an increase in the distance between the core and the substrate without the SiO2 film by about 2 mum
Keywords :
elemental semiconductors; optical directional couplers; optical losses; optical waveguide theory; silicon; silicon compounds; substrates; 1 mum; Si; SiO2; buried directional coupler; imaginary-distance beam-propagation method; leakage loss; parallel waveguides; phase variation; silicon substrate; Arrayed waveguide gratings; Directional couplers; Educational institutions; Insertion loss; Optical films; Optical polarization; Refractive index; Sampling methods; Silicon; Substrates; Beam-propagation method (BPM); leakage loss; leaky modes; polarization dependence; silicon substrate;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.881232
Filename :
1677642
Link To Document :
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