DocumentCode
1158199
Title
An effective approach to obtain model parameters for BJTS and FETS from data books
Author
Natarajan, S.
Author_Institution
Dept. of Electr. Eng., Tennessee Technol. Univ., Cookeville, TN, USA
Volume
35
Issue
2
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
164
Lastpage
169
Abstract
The authors address the problem of obtaining the values of small signal parameters of the high frequency hybrid-π models of bipolar junction transistors (BJTs) and junction FETs (JFETs) for a given set of bias conditions from the data-book values. They also show the methods of determining the ´typical´ values of the input parameters to be used in the model statements of circuit simulators, such as SPICE
Keywords
bipolar transistors; junction gate field effect transistors; semiconductor device models; BJT; JFET; SPICE; bipolar junction transistors; circuit analysis computing; data books; digital simulation; high frequency hybrid-π models; input parameters; junction FETs; semiconductor device models; small signal parameters; Books; Capacitance; Circuit simulation; FETs; Frequency response; Manufacturing; Predictive models; SPICE; Voltage;
fLanguage
English
Journal_Title
Education, IEEE Transactions on
Publisher
ieee
ISSN
0018-9359
Type
jour
DOI
10.1109/13.135583
Filename
135583
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