DocumentCode :
1158199
Title :
An effective approach to obtain model parameters for BJTS and FETS from data books
Author :
Natarajan, S.
Author_Institution :
Dept. of Electr. Eng., Tennessee Technol. Univ., Cookeville, TN, USA
Volume :
35
Issue :
2
fYear :
1992
fDate :
5/1/1992 12:00:00 AM
Firstpage :
164
Lastpage :
169
Abstract :
The authors address the problem of obtaining the values of small signal parameters of the high frequency hybrid-π models of bipolar junction transistors (BJTs) and junction FETs (JFETs) for a given set of bias conditions from the data-book values. They also show the methods of determining the ´typical´ values of the input parameters to be used in the model statements of circuit simulators, such as SPICE
Keywords :
bipolar transistors; junction gate field effect transistors; semiconductor device models; BJT; JFET; SPICE; bipolar junction transistors; circuit analysis computing; data books; digital simulation; high frequency hybrid-π models; input parameters; junction FETs; semiconductor device models; small signal parameters; Books; Capacitance; Circuit simulation; FETs; Frequency response; Manufacturing; Predictive models; SPICE; Voltage;
fLanguage :
English
Journal_Title :
Education, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9359
Type :
jour
DOI :
10.1109/13.135583
Filename :
135583
Link To Document :
بازگشت