Title :
Thin fluorinated gate dielectrics grown by rapid thermal processing in O2 with diluted NF3
Author :
Lo, G.Q. ; Ting, W. ; Ahn, J.H. ; Kwong, Dim-Lee ; Kuehne, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
The authors report the application of rapid thermal processing (RTP) to the fabrication of ultrathin (~10 nm) high-quality fluorinated oxides in O2+NF3 (100 ppm diluted in N2). NF3 was used as the F source gas and was introduced either prior to rapid thermal oxidation (RTO) or with O2 during the initial stage of RTO. The oxidation rate was enhanced because of the presence of NF3. In addition, F depth profiles in fluorinated oxides were dependent upon the process conditions. The electrical characteristics of MOS capacitors have been studied and correlated with the chemical properties. The initial interface state density (Dt) was found to decrease with F incorporation. The results suggest that the interfacial F incorporation plays a major role in determining the interface hardness for both hot-electron and radiation damages
Keywords :
dielectric thin films; incoherent light annealing; interface electron states; metal-insulator-semiconductor devices; oxidation; silicon compounds; F depth profiles; MOS capacitors; NF3; O2; O2-NF3; RTO; SiOxFy-Si; chemical properties; electrical characteristics; fluorinated gate dielectrics; hot electron immunity; interface hardness; interface state density; oxidation rate; radiation damages; rapid thermal oxidation; rapid thermal processing; Chemical vapor deposition; Dielectric substrates; Electrons; Fabrication; Interface states; MOS capacitors; Noise measurement; Oxidation; Rapid thermal processing; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
