Rapid isothermal processing for fabrication of GaAs-based electronic devices [HBTs]

Author

Pearton, Stephen J. ; Ren, Fan ; Katz, Avishay ; Fullowan, T.R. ; Abernathy, C.R. ; Hobson, W.S. ; Kopf, Rose F.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

39

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

154

Lastpage

159

Abstract

The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (f_T=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; incoherent light annealing; semiconductor technology; solid-state microwave devices; 65 GHz; GaAs wafers; GaAs-GaAlAs; HBTs; annealing; cutoff frequency; heterojunction bipolar transistors; heterostructure-based devices; implant activation annealing; ion-bombarded regions; ohmic metal contacts; parasitic capacitance reduction; rapid isothermal processing; Alloying; Annealing; Fabrication; Gallium arsenide; Heating; Heterojunction bipolar transistors; Implants; Isothermal processes; Parasitic capacitance; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108224

Filename

108224