Charge Simulation Method with Complex Fictitious Charges for Calculating Capacitive-Resistive Fields

This paper describes a numerical method for calculating electric fields very accurately in configurations including voluime resistance or surface resistance. The principle of the method is to incorporate the field effect of the true charge caused by conductivity in that of complex fictitious charges by the charge simulation method (CSM). CSM with complex charges for computing multi-phase AC fields is also described with a calculated example. Results are given for comparison with analytical expressions and for a disc-type gas insulation spacer having either volume resistance or surface resistance.