Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs

Author

Song, Jooyoung ; Yu, Bo ; Xiong, Weize ; Taur, Yuan

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA

Volume

56

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

533

Lastpage

536

Abstract

This brief reports the experimentally measured strain effect on electron and hole transport in (110)-oriented FinFETs. To separate out the series-resistance component, the low drain-bias resistance is differentiated with respect to the gate voltage. It is found that the hole mobility is enhanced while the electron mobility reduced toward short-channel devices. This effect is attributed to the gate-length-dependent strain in FinFET device structures.

Keywords

MOSFET; electrical resistivity; electron mobility; elemental semiconductors; hole mobility; silicon; silicon compounds; stress effects; titanium compounds; Si-TiSiN; electron mobility; electron transport; gate length; gate voltage; hole mobility; hole transport; lang110rang-oriented FinFET; low drain-bias resistance; n-channel FinFET; p-channel FinFET; series resistance; short-channel device; strain effect; Capacitive sensors; Charge carrier processes; Electrical resistance measurement; Electron mobility; FinFETs; Intrusion detection; Strain measurement; Student members; Temperature measurement; Voltage; FinFET; gate-length-dependent strain effect; mobility; tensile gate;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2011840

Filename

4783019