Title :
Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs
Author :
Song, Jooyoung ; Yu, Bo ; Xiong, Weize ; Taur, Yuan
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA
fDate :
3/1/2009 12:00:00 AM
Abstract :
This brief reports the experimentally measured strain effect on electron and hole transport in (110)-oriented FinFETs. To separate out the series-resistance component, the low drain-bias resistance is differentiated with respect to the gate voltage. It is found that the hole mobility is enhanced while the electron mobility reduced toward short-channel devices. This effect is attributed to the gate-length-dependent strain in FinFET device structures.
Keywords :
MOSFET; electrical resistivity; electron mobility; elemental semiconductors; hole mobility; silicon; silicon compounds; stress effects; titanium compounds; Si-TiSiN; electron mobility; electron transport; gate length; gate voltage; hole mobility; hole transport; lang110rang-oriented FinFET; low drain-bias resistance; n-channel FinFET; p-channel FinFET; series resistance; short-channel device; strain effect; Capacitive sensors; Charge carrier processes; Electrical resistance measurement; Electron mobility; FinFETs; Intrusion detection; Strain measurement; Student members; Temperature measurement; Voltage; FinFET; gate-length-dependent strain effect; mobility; tensile gate;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2011840
