Title :
Ion implantation in gallium arsenide MESFET technology
Author :
De Souza, Joel P. ; Sadana, Devendra K.
Author_Institution :
Inst. di Fisica, Univ. Federal do Rio Grande do Sul, Porto Alegre, Brazil
fDate :
1/1/1992 12:00:00 AM
Abstract :
The authors emphasize controlled shallow doping of GaAs by ion implantation and its limitations to state-of-the-art GaAs IC technology. The authors discuss the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic H diffuses into the implanted region of GaAs from a plasma-enhanced chemical vapor deposition Si3N4 cap during the deposition as well as during subsequent annealing, and the H retards the electrical activation kinetics of the implanted Si. Thru-Si cap dopant implants into GaAs have been studied to enhance dopant concentration in the surface region of the GaAs by recoil-implanted Si from the cap. Application of ion implantation to achieve buried-p layers in GaAs is also briefly discussed
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; field effect integrated circuits; gallium arsenide; incoherent light annealing; integrated circuit technology; ion implantation; GaAs-Si3N4; GaAs:Si,H; IC technology; MESFET technology; RTA; buried-p layers; controlled shallow doping; dopant concentration; electrical activation behavior; implant profiles; ion implantation; plasma-enhanced chemical vapor deposition Si3N4 cap; rapid thermal annealing; recoil-implanted Si; surface region; Atomic layer deposition; Chemical technology; Doping; Gallium arsenide; Ion implantation; MESFETs; Plasma chemistry; Plasma immersion ion implantation; Rapid thermal annealing; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
