Ion implantation in gallium arsenide MESFET technology

Author

De Souza, Joel P. ; Sadana, Devendra K.

Author_Institution

Inst. di Fisica, Univ. Federal do Rio Grande do Sul, Porto Alegre, Brazil

Volume

39

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

166

Lastpage

175

Abstract

The authors emphasize controlled shallow doping of GaAs by ion implantation and its limitations to state-of-the-art GaAs IC technology. The authors discuss the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic H diffuses into the implanted region of GaAs from a plasma-enhanced chemical vapor deposition Si₃N₄ cap during the deposition as well as during subsequent annealing, and the H retards the electrical activation kinetics of the implanted Si. Thru-Si cap dopant implants into GaAs have been studied to enhance dopant concentration in the surface region of the GaAs by recoil-implanted Si from the cap. Application of ion implantation to achieve buried-p layers in GaAs is also briefly discussed

Keywords

III-V semiconductors; Schottky gate field effect transistors; doping profiles; field effect integrated circuits; gallium arsenide; incoherent light annealing; integrated circuit technology; ion implantation; GaAs-Si₃N₄; GaAs:Si,H; IC technology; MESFET technology; RTA; buried-p layers; controlled shallow doping; dopant concentration; electrical activation behavior; implant profiles; ion implantation; plasma-enhanced chemical vapor deposition Si₃N₄ cap; rapid thermal annealing; recoil-implanted Si; surface region; Atomic layer deposition; Chemical technology; Doping; Gallium arsenide; Ion implantation; MESFETs; Plasma chemistry; Plasma immersion ion implantation; Rapid thermal annealing; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108226

Filename

108226