DocumentCode :
1159123
Title :
Double-Exposure Grayscale Photolithography
Author :
Mosher, Lance ; Waits, Christopher M. ; Morgan, Brian ; Ghodssi, Reza
Author_Institution :
Lockheed Martin Space Syst. Co., Newtown, PA
Volume :
18
Issue :
2
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
308
Lastpage :
315
Abstract :
A double-exposure grayscale photolithography technique is developed and demonstrated to produce three-dimensional (3-D) structures with a high vertical resolution. Pixelated grayscale masks often suffer from limited vertical resolution due to restrictions on the mask fabrication. The double-exposure technique uses two pixelated grayscale mask exposures before development and dramatically increases the vertical resolution without altering the mask fabrication process. An empirical calibration technique was employed for mask design and was also applied to study the effects of exposure time and mask misalignment on the photoresist profile. This technology has been demonstrated to improve the average step between photoresist levels from 0.19 to 0.02 mum and the maximum step from 0.43 to 0.2 mum compared to a single pixelated exposure using the same mask design.
Keywords :
masks; micromechanical devices; photolithography; double-exposure grayscale photolithography; high vertical resolution; photoresist profile; pixelated grayscale masks; three-dimensional structures; Grayscale lithography; microelectromechanical systems (MEMS); micromachining; three-dimensional (3-D) lithography;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2008.2011703
Filename :
4783064
Link To Document :
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