DocumentCode :
1159154
Title :
A New Low Crosstalk InP Digital Optical Switch Based on Carrier-Induced Effects for 1.55- 
m Applications
Author :
Zegaoui, Malek ; Decoster, Didier ; Harari, Joseph ; Magnin, Vincent ; Wallart, Xavier ; Chazelas, Jean
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol. (IEMN), Univ. des Sci. et Technol. de Lille, Villeneuve dAscq
Volume :
21
Issue :
8
fYear :
2009
fDate :
4/15/2009 12:00:00 AM
Firstpage :
546
Lastpage :
548
Abstract :
This letter demonstrates an original carrier-induced effects InP digital optical switch (DOS) designed to achieve a low optical crosstalk for 1.55-mum wavelength applications. It is based on a widened multimode Y-junction combined with a sinusoidal shape waveguide to increase the optical contrast ratio between the two output branches. The entire InP-InGaAsP-InP DOS was designed using a semi-vectorial three-dimensional beam propagation method. The fabricated InP DOS with lambdag = 1.3 mum heterostructure exhibits an optical crosstalk as low as -38.5 dB for a 33-mA switching current at 1.55-mum wavelength for a favourable polarized input light.
Keywords :
III-V semiconductors; indium compounds; integrated optics; light propagation; microwave photonics; optical switches; InP; carrier induced effects; current 33 mA; digital optical switch; semivectorial 3D beam propagation method; wavelength 1.55 mum; widened multimode Y-junction; Adiabatic transitions; InP–InGaAsP–InP waveguides; carrier-induced effects; crosstalk; digital optical switch (DOS);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2014646
Filename :
4783067
Link To Document :
