Stacked-diode electroabsorption modulator

Author

Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

6

Issue

8

fYear

1994

Firstpage

936

Lastpage

938

Abstract

We present a n-i (multiple quantum well [MQW])-p-i(MQW)-n device wherein the n contacts are tied together and biased with respect to the p contact to form an electroabsorptive modulator. Since the light passes through both MQWs large electroabsorption is obtained with lowered voltages since the field is applied in parallel to both MQWs. In particular, wide optical bandwidth is obtained at moderate voltages since high fields may be applied resulting in large Stark shifts of the MQWs. We measure a change in reflectivity greater than 40 percent over a optical bandwidth of 20 nm for 0-14 volts operation.<>

Keywords

III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; p-i-n diodes; p-n heterojunctions; reflectivity; semiconductor quantum wells; AlGaAs-GaAs-AlAs; Stark shifts; multiple quantum well; n contacts; p contact; reflectivity; stacked-diode electroabsorption modulator; voltages; wide optical bandwidth; Bandwidth; Capacitance; Logic arrays; Optical arrays; Optical modulation; Quantum well devices; Reflectivity; Smart pixels; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313057

Filename

313057