Title :
3-D optical and electrical simulation for CMOS image sensors
Author_Institution :
Link Res. Corp., Tokyo, Japan
fDate :
1/1/2003 12:00:00 AM
Abstract :
The optical and electrical characteristics of CMOS image sensors, such as readout, saturation, reset, charge-voltage conversion, and crosstalk characteristics, are analyzed by a three-dimensional (3-D) device simulator SPECTRA and a 3-D optical simulator TOCCATA which were developed for the analysis of CCD image sensors. The model of readout operation for a buried photodiode with potential barrier and dip is discussed with consideration of thermal diffusion. The transient simulation is executed for readout and reset operation. A novel calculation method for photodiode saturation condition is proposed. The optical and electronic crosstalk is analyzed individually by ray-tracing and current calculation. It is found that the above methods successfully analyze the optical and electrical characteristics of CMOS image sensors.
Keywords :
CMOS image sensors; circuit simulation; optical crosstalk; photodiodes; readout electronics; transient analysis; 3D device simulator; CMOS image sensors; SPECTRA; TOCCATA; buried photodiode; charge-voltage conversion; crosstalk characteristics; electrical characteristics; photodiode saturation condition; potential barrier; ray-tracing; readout; readout operation; reset; reset operation; saturation; thermal diffusion; transient simulation; Analytical models; CMOS image sensors; Electric variables; Image analysis; Image converters; Optical crosstalk; Optical devices; Optical saturation; Optical sensors; Photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.806965
