Title :
Symmetric self-electro-optic effect device using symmetric-cavity quantum well electroabsorption modulators
Author :
Zouganeli, P. ; Grindle, R.J. ; Rivers, A.W. ; Parry, G. ; Roberts, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
We report results obtained from a symmetric-cavity Fabry-Perot quantum well modulator in GaAs/AlGaAs. A reflection-change of /spl ap/46% with an insertion loss of 1.3 dB are obtained in the normally-off mode under a reverse bias voltage of 7.5 V. Bistable operation is demonstrated, for the first time using such devices, by connecting two modulators in the symmetric self-electro-optic effect device configuration.<>
Keywords :
III-V semiconductors; SEEDs; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; losses; semiconductor quantum wells; 1.3 dB; 7.5 V; GaAs-AlGaAs; GaAs/AlGaAs; bistable operation; insertion loss; reflection-change; reverse bias voltage; symmetric self-electro-optic effect device; symmetric self-electro-optic effect device configuration; symmetric-cavity quantum well electroabsorption modulators; Absorption; Excitons; Fabry-Perot; Insertion loss; Joining processes; Mirrors; Optical reflection; Reflectivity; Rivers;
Journal_Title :
Photonics Technology Letters, IEEE
