Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager

Author

Inoue, Ikuko ; Tanaka, Nagataka ; Yamashita, Hirofumi ; Yamaguchi, Tetsuya ; Ishiwata, Hiroaki ; Ihara, Hisanori

Author_Institution

Syst. LSI Div., Toshiba Corp. Semicond. Co., Yokohama, Japan

Volume

50

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

43

Lastpage

47

Abstract

A low-leakage current and low-operating-voltage buried-photodiode structure of CMOS image sensors has been developed. The new structure adopted a modified fabrication process as well as an additional shallow p+ layer structure that covers the entire surface of the deep n-type photodiode. The required operating voltage for complete charge transfer from the photodiode is 3.3 V. Furthermore, the leakage current level allows high-quality images comparable to those of CCD image sensors.

Keywords

CMOS image sensors; leakage currents; photodiodes; 3.3 V; CMOS imager; buried photodiode; charge transfer; deep n-type photodiode; fabrication process; high-quality images; leakage current; operating voltage; shallow p+ layer structure; CMOS image sensors; CMOS logic circuits; Charge transfer; Charge-coupled image sensors; Compressive stress; Leakage current; Photodiodes; Semiconductor device noise; Tensile stress; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.807525

Filename

1185161