Dark current reduction in stacked-type CMOS-APS for charged particle imaging

Author

Takayanagi, Isao ; Nakamura, Junichi ; Fossum, Eric R. ; Nagashima, Kazuhide ; Kunihoro, Takuya ; Yurimoto, Hisayoshi

Author_Institution

Japan Imaging Design Center, Tokyo, Japan

Volume

50

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

70

Lastpage

76

Abstract

A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. At low operation temperatures (<200 K), the dark current of the CMOS-APS is determined by the hot carrier effect. A twin well CMOS pixel with a p-MOS readout and n-MOS reset circuit achieves low leakage current as low as 5×10^-8 V/s at the pixel electrode under liquid nitrogen temperature of 77 K. The total read noise floor of 0.1 mV_rms at the pixel electrode was obtained by nondestructive readout correlated double sampling (CDS) with the CDS interval of 21 s.

Keywords

CMOS image sensors; dark conductivity; mass spectrometer accessories; nondestructive readout; particle detectors; signal sampling; 21 s; 77 to 200 K; charged particle detection; charged particle imaging; dark current reduction; fixed-pattern noise; hot carrier effect; leakage current; low operation temperatures; mass spectroscopy; n-MOS reset circuit; nondestructive readout correlated double sampling; p-MOS readout; pixel structure; read noise; stacked CMOS-active pixel sensor; twin well CMOS pixel; CMOS image sensors; Dark current; Detectors; Electrodes; Image sampling; Leakage current; Linearity; Mass spectroscopy; Pixel; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.806963

Filename

1185165