DocumentCode
1159503
Title
Optical waveguide switches in silicon based on Ge-indiffused waveguides
Author
Fischer, U. ; Schuppert, B. ; Petermann, K.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany
Volume
6
Issue
8
fYear
1994
Firstpage
978
Lastpage
980
Abstract
An optical waveguide switch based on single-moded Ge-indiffused waveguides with a lateral pin-diode structure for carrier injection has been realized. The switch is polarization independent and shows an on-off-ratio better than 16.5 dB at a wavelength of 1.3 μm. By time domain measurements the coexistence of the plasma dispersion and the thermo-optical effect is shown. Both effects are separated and quantified.
Keywords
diffusion in solids; germanate glasses; integrated optics; light polarisation; optical switches; optical waveguides; p-i-n photodiodes; thermo-optical effects; 1.3 mum; Ge-indiffused waveguides; carrier injection; lateral pin-diode structure; on-off-ratio; optical waveguide switches; plasma dispersion; polarization independent; silicon; single-moded; thermo-optical effect; time domain measurements; Dispersion; Optical devices; Optical interferometry; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Plasma devices; Plasma waves; Silicon;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.313069
Filename
313069
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