DocumentCode :
1159503
Title :
Optical waveguide switches in silicon based on Ge-indiffused waveguides
Author :
Fischer, U. ; Schuppert, B. ; Petermann, K.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany
Volume :
6
Issue :
8
fYear :
1994
Firstpage :
978
Lastpage :
980
Abstract :
An optical waveguide switch based on single-moded Ge-indiffused waveguides with a lateral pin-diode structure for carrier injection has been realized. The switch is polarization independent and shows an on-off-ratio better than 16.5 dB at a wavelength of 1.3 μm. By time domain measurements the coexistence of the plasma dispersion and the thermo-optical effect is shown. Both effects are separated and quantified.
Keywords :
diffusion in solids; germanate glasses; integrated optics; light polarisation; optical switches; optical waveguides; p-i-n photodiodes; thermo-optical effects; 1.3 mum; Ge-indiffused waveguides; carrier injection; lateral pin-diode structure; on-off-ratio; optical waveguide switches; plasma dispersion; polarization independent; silicon; single-moded; thermo-optical effect; time domain measurements; Dispersion; Optical devices; Optical interferometry; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Plasma devices; Plasma waves; Silicon;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.313069
Filename :
313069
Link To Document :
بازگشت