Title :
A high-speed, 240-frames/s, 4.1-Mpixel CMOS sensor
Author :
Krymski, Alexander I. ; Bock, Nikolai E. ; Tu, Nianrong ; Van Blerkom, Daniel ; Fossum, Eric R.
Author_Institution :
Micron Technol. Inc., Pasadena, CA, USA
fDate :
1/1/2003 12:00:00 AM
Abstract :
This paper describes a large-format 4-Mpixel (2352×1728) sensor with on-chip parallel 10-b analog-to-digital converters (ADCs). The chip size is 20×20 mm with a 7-μm pixel pitch. At a 66-MHz master clock rate and 3.3-V operating voltage, it achieves a high frame rate of 240 frames/s delivering 9.75 Gb/s of data with power dissipation of less than 700 mW. The principal architectural features of the sensor are discussed along with the results of sensor characterization.
Keywords :
CMOS image sensors; analogue-digital conversion; integrated circuit noise; low-power electronics; 3.3 V; 4.1 Mpixel; 66 MHz; 7 micron; 700 mW; 9.75 Gbit/s; CMOS sensor; frame rate; image sensors; master clock rate; operating voltage; parallel analog-to-digital converters; power dissipation; sensor characterization; Analog-digital conversion; CMOS image sensors; Capacitance; Clocks; Image sensors; Pixel; Read-write memory; Sensor arrays; Sensor phenomena and characterization; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.806961
