Title :
PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation
Author :
Gildenblat, Gennady ; Li, Xin ; Wu, Weimin ; Wang, Hailing ; Jha, Amit ; Van Langevelde, Ronald ; Smit, Geert D J ; Scholten, Andries J. ; Klaassen, Dirk B M
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA
Abstract :
This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling context
Keywords :
MOSFET; circuit simulation; linearisation techniques; semiconductor device models; surface potential; tunnelling; MOSFET model; circuit simulation; compact modeling; computational techniques; gate tunneling current; mobility description; model structure; noise sources; retrograde impurity profile; surface potential; symmetric linearization method; velocity saturation description; Circuit simulation; Computational efficiency; Context modeling; Equations; Fabrication; MOSFET circuits; Mathematical model; Physics; Radio frequency; Semiconductor process modeling; Compact model; MOSFET; surface potential; surface-potential-based (PSP) model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.881006
