A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region

Author

He, Jin ; Chan, Mansun ; Zhang, Xing ; Wang, Yangyuan

Author_Institution

Nanoscale Device & Circuit Group, Beijing

Volume

53

Issue

9

fYear

2006

Firstpage

2008

Lastpage

2016

Abstract

A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its high accuracy in predicting the surface potential and the transcapacitance under various bias conditions has also been verified by a comparison with the numerical results. The explicit surface-potential solution not only leads to a more clear understanding of MOSFET device physics but also provides a better platform to develop the advanced surface potential-based model for the circuit simulation

Keywords

MOSFET; approximation theory; circuit simulation; semiconductor device models; surface potential; MOSFET; accumulation region; analytic solution; circuit simulation; compact modeling; device physics; explicit solution; strong-inversion region; surface potential; transcapacitance; Accuracy; Capacitance; Circuit simulation; Computational modeling; Councils; Equations; Helium; MOSFET circuits; Physics; Smoothing methods; Analytic solution; MOSFETs; compact modeling; surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.880364

Filename

1677834