A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations

Author

Wang, Hailing ; Li, Xin ; Wu, Weimin ; Gildenblat, Gennady ; Van Langevelde, Ronald ; Smit, Geert D J ; Scholten, Andries J. ; Klaassen, Dirk B M

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA

Volume

53

Issue

9

fYear

2006

Firstpage

2035

Lastpage

2043

Abstract

The spline collocation-based nonquasi-static (NQS) model is further developed to include all regions of operation and small-geometry effects. The new formulation provides a unified (hence consistent) approach to both large-signal and small-signal NQS modeling and is sufficiently flexible to work with any surface-potential-based MOSFET model. The model is verified through comparison with the channel segmentation method, two-dimensional numerical simulations, and experimental results and demonstrates a controlled tradeoff between model accuracy and efficiency. The new NQS model has been implemented into PSP model. Circuit simulations are given to demonstrate the accuracy and applicability of the new model

Keywords

MOSFET; circuit simulation; semiconductor device models; surface potential; 2D numerical simulations; PSP model; channel segmentation; circuit simulations; large-signal simulation; nonquasi-static MOSFET model; small-geometry effects; small-signal simulations; spline collocation; surface potential; unified approach; Circuit simulation; Differential equations; Helium; MOSFET circuits; Numerical simulation; Parameter extraction; Partial differential equations; Radio frequency; Semiconductor device modeling; Spline; Compact model; PSP model; nonquasi-static (NQS); spline collocation method; surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.881003

Filename

1677837