RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

Author

Schmitz, J. ; Cubaynes, F.N. ; Havens, R.J. ; de Kort, R. ; Scholten, A.J. ; Tiemeijer, L.F.

Author_Institution

Philips Res. Leuven, Belgium

Volume

24

Issue

1

fYear

2003

Firstpage

37

Lastpage

39

Abstract

We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.

Keywords

MOS capacitors; MOSFET; capacitance measurement; dielectric thin films; leakage currents; microwave field effect transistors; microwave measurement; semiconductor device testing; 0.5 to 10 GHz; MOS capacitor; MOS parameter extraction; MOSFETs; RF capacitance-voltage characterization; RF measurement frequencies; RF test structures; accumulation; depletion; gate leakage current densities; high leakage dielectrics; inversion; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Design methodology; Dielectric measurements; Leakage current; MOSFETs; Radio frequency; Robustness;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.807016

Filename

1185203