The Physical Background of JUNCAP2

Author

Scholten, Andries J. ; Smit, Geert D J ; Durand, Marie ; Van Langevelde, Ronald ; Klaassen, Dirk B M

Author_Institution

Philips Res. Lab., Eindhoven

Volume

53

Issue

9

fYear

2006

Firstpage

2098

Lastpage

2107

Abstract

A new physics-based junction model for CMOS, called JUNCAP2, is presented. It contains new single-piece formulations for the Shockley-Read-Hall generation/recombination current and the trap-assisted tunneling (TAT) current, which are valid both in forward and reverse mode of operation. Moreover, the TAT model extends the existing model (IEEE Trans. Electron Devices, vol. 39, p. 2090, 1992) to the high electric fields encountered in today´s CMOS technologies. Furthermore, the model contains expressions for junction capacitance, ideal current, band-to-band tunneling current, avalanche breakdown, and junction shot noise. The parameter extraction is also discussed in this paper

Keywords

MOSFET; electron-hole recombination; semiconductor device models; tunnelling; CMOS; JUNCAP2; Shockley-Read-Hall generation current; TAT model; avalanche breakdown; band-to-band tunneling current; junction capacitance; junction shot noise; parameter extraction; physics-based junction model; recombination current; trap-assisted tunneling current; Avalanche breakdown; CMOS technology; Capacitance; Electrostatics; Equations; Implants; Leakage current; Parameter extraction; Semiconductor device modeling; Tunneling; Compact model; JUNCAP2; PSP model; junction leakage; junctions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.881004

Filename

1677843