Rapid isothermal processing of Si+/P+ and Mg +/P+ co-implantations into InP

The authors present the results of investigations on electrical properties of Si⁺/P⁺ and Mg⁺/P⁺ co-implanted InP wafers subjected to rapid isothermal processing. It was found that a significant improvement of activation of Si and Mg in InP can be obtained by P⁺ co-implantations and rapid isothermal processing. The annealing cycle was at temperatures from 825 to 875°C for 5 and 14 s. The maximum dopant activation and peak electron concentration for Si⁺/P⁺ coimplants at doses of 1×10¹⁵/cm² were 70% and 5×10 ¹⁹ cm³. A high hole concentration of 1.1×10 ¹⁹/cm³ was obtained by Mg⁺/P⁺ coimplantations