DocumentCode :
1159898
Title :
Impact of Scaling on Analog Performance and Associated Modeling Needs
Author :
Murmann, Boris ; Nikaeen, Parastoo ; Connelly, D.J. ; Dutton, Robert W.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA
Volume :
53
Issue :
9
fYear :
2006
Firstpage :
2160
Lastpage :
2167
Abstract :
This paper explores modeling and technology-scaling issues related to analog performance in advanced CMOS technologies. Performance metrics for analog circuits are defined, to provide insight into the impact of device scaling on power-constrained analog circuit design. Current and previous generation technologies (90 nm and older) are evaluated using standard compact models. Technology nodes below 90 nm are simulated at the device level to show trends in analog performance metrics and to evaluate the impact of nonminimum gate length and alternate doping profiles. Results indicate that the modeling of moderate-to-weak inversion behavior will continue to grow in importance. Simulations suggest that using nonminimum length and drain-side engineered devices at the 45-nm technology node offers an attractive degree of freedom for analog circuit design
Keywords :
CMOS analogue integrated circuits; circuit simulation; doping profiles; integrated circuit modelling; 45 nm; 90 nm; advanced CMOS technologies; analog performance; device scaling; doping profiles; drain side engineered devices; gate length; performance metrics; power constrained analog circuit design; standard compact models; Analog circuits; CMOS technology; Circuit simulation; Doping profiles; Integrated circuit modeling; Integrated circuit technology; Measurement; Paper technology; Semiconductor device modeling; Semiconductor process modeling; CMOS; distortion; future performance; scaling; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.880372
Filename :
1677849
Link To Document :
بازگشت