DocumentCode
1160
Title
142 GHz amplifier with 18.5 dB gain and 7.9 mw DC power in 65 nm CMOS
Author
Xiangyu Meng ; Baoyong Chi ; Haikun Jia ; Lixue Kuang ; Zhihua Wang
Author_Institution
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Volume
50
Issue
21
fYear
2014
fDate
October 9 2014
Firstpage
1513
Lastpage
1514
Abstract
A single-ended amplifier with a magnetic-coupled feedback embedded network is proposed and its small-signal equivalent circuit is analysed in detail. The embedded network cancels the effects of the gate-drain capacitor Cgd and introduces negative resistance into the transistor drain, so that the maximum power gain of the transistor could be achieved. Based on this design methodology, a 142 GHz amplifier with 18.5 dB power gain and 7.9 mW DC power has been implemented in 65 nm CMOS.
Keywords
CMOS analogue integrated circuits; equivalent circuits; millimetre wave amplifiers; CMOS; frequency 142 GHz; gain 18.5 dB; gate-drain capacitor; magnetic-coupled feedback embedded network; maximum power gain; negative resistance; power 7.9 mW; single-ended amplifier; size 65 nm; small-signal equivalent circuit; transistor drain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.2822
Filename
6926964
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