DocumentCode :
1160105
Title :
High-Performance 
MIM Capacitors for Analog Applications
MIM Capacitors for Analog ApplicationsAuthor :
Chiang, K.C. ; Huang, Ching-Chien ; Chen, G.L. ; Chen, Wen Jauh ; Kao, H.L. ; Wu, Yung-Hsien ; Chin, Albert ; McAlister, Sean P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume :
53
Issue :
9
fYear :
2006
Firstpage :
2312
Lastpage :
2319
Abstract :
TaN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mum2 have been developed by using a high-kappa (kappa=147-169) SrTiO3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V2) voltage coefficient of the capacitance and the 3times10-8 A/cm2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors´ requirements for analog capacitors at year 2018
Keywords :
MIM devices; analogue circuits; annealing; high-k dielectric thin films; nanotechnology; thin film capacitors; MIM capacitors; TaN-SrTiO3-TaN; analog applications; analog capacitors; high-K dielectric; metal-insulator-metal; nanometer-sized microcrystals; post-deposition annealing; Annealing; Capacitance; Costs; Degradation; Dielectrics; Electrodes; Leakage current; MIM capacitors; Plasma temperature; Voltage; Capacitor; International Technology Roadmap for Semiconductors (ITRS); metal–insulator–metal (MIM);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.881013
Filename :
1677869
Link To Document :
