Title :
New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation
Author :
Kumar, M. Jagadesh ; Bahl, Harsh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi
Abstract :
A new Schottky-gate bipolar-mode field-effect transistor (SBMFET) is proposed and verified by a two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep-diffused p+ regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting the minority carriers into the drift region. The SBMFET is demonstrated to have an improved current-gain, identical breakdown voltage, and on-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBMFET is much simpler and obliterates the need for deep thermal diffusion of p + gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications
Keywords :
Schottky gate field effect transistors; bipolar transistors; electric breakdown; electrical conductivity; minority carriers; 2D simulation; SBMFET; Schottky-gate bipolar-mode field-effect transistor; conductivity modulation; current-gain; deep-diffused p+ regions; high-current switching; identical breakdown voltage; medium-power switching; minority carriers; silicon planar surface; Analytical models; Conductivity; FETs; Fabrication; Insulated gate bipolar transistors; Schottky gate field effect transistors; Semiconductor process modeling; Silicon; Switches; Two dimensional displays; Bipolar-mode field-effect transistor (BMFET); Schottky gates; conductivity modulation; two-dimensional (2-D) modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.880835
