Title :
A new derivation of the law of the junctions
Author :
Pota, Hemanshu Roy
Author_Institution :
Sch. of Inf. Technol. & Electr. Eng., Univ. Coll., Canberra, ACT, Australia
Abstract :
In this paper, the author presents students with a new and simple derivation of the law of the junctions. The law of the junctions is crucial to the correct understanding of the operation of the bipolar junction transistor. The integral of the product of the density of energy states and Fermi-Dirac distribution function is used to derive the density of free electrons and holes crossing from one side to another at a pn-junction under an external applied voltage.
Keywords :
Dirac equation; bipolar transistors; p-n junctions; Fermi-Dirac distribution; bipolar junction transistor; electrons crossing; energy distribution; law of the junctions; pn-junction; Australia; Charge carrier processes; Distribution functions; Electrons; Energy states; Helium; Information technology; Semiconductor diodes; Semiconductor impurities; Voltage; 65; BJT; Bipolar junction transistor; diode current; electrons crossing over; pn-junction built-in potential; the law of the junctions;
Journal_Title :
Education, IEEE Transactions on
DOI :
10.1109/TE.2004.832884
