Improved Y-factor method for wide-band on-wafer noise-parameter measurements

Author

Tiemeijer, Luuk F. ; Havens, Ramon J. ; De Kort, Randy ; Scholten, Andries J.

Author_Institution

Philips Res. Labs., Eindhoven, Netherlands

Volume

53

Issue

9

fYear

2005

Firstpage

2917

Lastpage

2925

Abstract

A new noise-figure measurement method, which combines the simplicity of the "classical" Y-factor method with the accuracy of the widely used "cold noise-source" method, is reported. Implemented in our fully automated wide-band 1-18-GHz on-wafer noise-parameter measurement system, accurate results are obtained using a small set of precharacterized source impedances. We illustrate our method and its accuracy with data taken on a low-noise GaAs pseudomorphic high electron-mobility transistor device, and quantify the impact of the instrumental uncertainties on the extracted noise parameters.

Keywords

III-V semiconductors; UHF measurement; electric noise measurement; gallium arsenide; high electron mobility transistors; microwave measurement; semiconductor device noise; 1 to 18 GHz; GaAs; Y-factor method; cold noise-source method; high electron-mobility transistor; integrated circuits; noise-figure measurement method; on-wafer microwave noise measurement; reverse error analysis; source impedance; wide-band noise-parameter measurement; Admittance; Gain measurement; Impedance; Integrated circuit noise; Noise figure; Noise level; Noise measurement; Power measurement; Signal to noise ratio; Wideband; Calibration; deembedding; integrated circuits; on-wafer microwave noise measurements; reverse error analysis;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.854243

Filename

1505016