• DocumentCode
    1160930
  • Title

    Comments on "Thermal resistance calculation of AlGaN-GaN devices"

  • Author

    Yin, Wen-Yan

  • Author_Institution
    Temasek Labs., Nat. Univ. of Singapore, Singapore
  • Volume
    53
  • Issue
    9
  • fYear
    2005
  • Firstpage
    3051
  • Lastpage
    3052
  • Abstract
    For original paper see Dawish et al. (IEEE Trans. Microw. Theory Tech., vol. 52, no.11, p.2611-20, 2004 November).
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; numerical analysis; thermal resistance; wide band gap semiconductors; AlGaN-GaN; channel temperature; numerical verification; power handling capability; semiconductor field effect transistors; thermal resistance calculation; Aluminum gallium nitride; Equations; FETs; Finite element methods; Gallium nitride; Notice of Violation; Silicon carbide; Substrates; Temperature; Thermal resistance; AlGaN–GaN; thermal resistance calculation;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2005.854219
  • Filename
    1505031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1160930