• DocumentCode
    1160942
  • Title

    Authors´ reply [to comments on ´Thermal resistance calculation of AlGaN-GaN devices´]

  • Author

    Darwish, Ali M. ; Bayba, Andrew ; Hung, H. Alfred

  • Author_Institution
    Army Res. Lab., Adelphi, MD, USA
  • Volume
    53
  • Issue
    9
  • fYear
    2005
  • Firstpage
    3052
  • Lastpage
    3053
  • Abstract
    The present authors reply to the comment by Yin (IEEE Trans. Microw. Theory Tech., vol.53, no.9, p. 3050-2, 2005 September) on the original paper by Darwish et al. (IEEE Trans. Microw. Theory Tech., vol.52, no.11, p.2611-20, 2004 November).
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; thermal resistance; wide band gap semiconductors; AlGaN-GaN devices; channel temperature; thermal resistance; Biological tissues; Coaxial components; Dielectrics; Electrochemical impedance spectroscopy; Gallium nitride; Immune system; In vivo; Probes; Temperature; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2005.854215
  • Filename
    1505032
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1160942